Pulse-Tube Dilution Refrigeration Below 10 mK
نویسندگان
چکیده
منابع مشابه
Metallic Coulomb blockade thermometry down to 10 mK and below.
We present an improved nuclear refrigerator reaching 0.3 mK, aimed at microkelvin nanoelectronic experiments, and use it to investigate metallic Coulomb blockade thermometers (CBTs) with various resistances R. The high-R devices cool to slightly lower T, consistent with better isolation from the noise environment, and exhibit electron-phonon cooling [proportional] T(5) and a residual heat-leak ...
متن کاملErratum: Nanoelectronic primary thermometry below 4 mK
This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the mater...
متن کاملNanoelectronic primary thermometry below 4 mK
Cooling nanoelectronic structures to millikelvin temperatures presents extreme challenges in maintaining thermal contact between the electrons in the device and an external cold bath. It is typically found that when nanoscale devices are cooled to ∼ 10 mK the electrons are significantly overheated. Here we report the cooling of electrons in nanoelectronic Coulomb blockade thermometers below 4 m...
متن کاملSelection of Capillary Tube for Refrigeration System
Proper selection of capillary tube it is essential to study the effect of capillary tube geometry on the performance of refrigeration systems. The literature review is focused on the influence of geometrical parameters like tube length, diameter, coil pitch, number of twist and twisted angle on pressure drop and coefficient of performance (COP) of the system. These parameters can be optimized u...
متن کاملElectronics below 10 Nm
This chapter reviews prospects for the development and practical introduction of ultrasmall electron devices, including nanoscale field-effect transistors (FETs) and single-electron transistors (SETs), as well as new concepts for nanometer-scalable memory cells. Physics allows silicon FETs to be scaled down to ∼3 nm gate length, but below ∼10 nm the devices are extremely sensitive to minute (su...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Low Temperature Physics
سال: 2007
ISSN: 0022-2291,1573-7357
DOI: 10.1007/s10909-007-9450-6